Semiconductor light emitting element

Details Semiconductor light emitting element Semiconductor light emitting element

1995-07-06

1997-05-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 95, 257 96, 257 97, 257103, 257 99, H01L 3300

Patent

active

056314752

ABSTRACT:
A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.

REFERENCES:
patent: 4897846 (1990-01-01), Yoshida et al.
patent: 5278857 (1994-01-01), Yuge et al.
patent: 5410159 (1995-04-01), Sugawara et al.
patent: 5466950 (1995-11-01), Sugawara et al.
patent: 5481122 (1996-01-01), Jou et al.

Affiliated with

Also associated with

Rating

Semiconductor light emitting element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1725672