Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2004-03-19
2010-10-05
Mondt, Johannes P (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S088000, C257S089000, C257S099000
Reexamination Certificate
active
07808011
ABSTRACT:
A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {1120} or {1010} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
REFERENCES:
patent: 3599109 (1971-08-01), Guggenheim et al.
patent: 4084130 (1978-04-01), Holton
patent: 4240692 (1980-12-01), Winston
patent: 4289381 (1981-09-01), Garvin et al.
patent: 5314838 (1994-05-01), Cho et al.
patent: 5457530 (1995-10-01), Nagai
patent: 5727108 (1998-03-01), Hed
patent: 5805624 (1998-09-01), Yang et al.
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6072197 (2000-06-01), Horino et al.
patent: 6122103 (2000-09-01), Perkins et al.
patent: 6257737 (2001-07-01), Marshall et al.
patent: 6364487 (2002-04-01), Weber et al.
patent: 6520643 (2003-02-01), Holman et al.
patent: 6560265 (2003-05-01), Hwang et al.
patent: 6603243 (2003-08-01), Parkyn et al.
patent: 6670647 (2003-12-01), Yamasaki et al.
patent: 6739723 (2004-05-01), Haven et al.
patent: 7091514 (2006-08-01), Craven et al.
patent: 2001/0026567 (2001-10-01), Kaneko et al.
patent: 2001/0036083 (2001-11-01), Weber et al.
patent: 2002/0004307 (2002-01-01), Yamada
patent: 2002/0030198 (2002-03-01), Coman et al.
patent: 2002/0031153 (2002-03-01), Niwa et al.
patent: 2002/0084467 (2002-07-01), Krames et al.
patent: 2002/0110172 (2002-08-01), Hasnain et al.
patent: 2002/0140880 (2002-10-01), Weindorf et al.
patent: 2003/0067568 (2003-04-01), Hamamoto
patent: 2003/0214633 (2003-11-01), Roddy et al.
patent: 2003/0235229 (2003-12-01), Deng et al.
patent: 2004/0120379 (2004-06-01), Kaneko et al.
patent: 2004/0189167 (2004-09-01), Adachi et al.
patent: WO 01/93387 (2001-12-01), None
Mukaihara et al., “Polarization Control of Vertical-Cavity Surface-Emitting Lasers Using a Birefringent Metal/Dielectric Polarizer Loaded on Top Distributed Bragg Reflector”, IEEE Jounral of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1995, pp. 667-673).
Nishiyama et al, IEEE Photonics Technology Letters 10(12), 1676-1678 (Dec. 1998).
Mukaihara et al., “Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector”, in the 14th IEEE International Semiconductor Laser Conference, Maui (HI), USA, Sep. 19-23, 1994; pp. 182-183.
Uenohara et al., “Investigation of DynamicPolarization Stability of 850-nm GaAs-based Vertical-Cavity Surface-Emitting Lasers Grown on (311)B and (100) Substrates”, IEEE Photonics Technology Letters, vol. 11, No. 4, Apr. 1999, pp. 400-402.
Ser et al, “Polarization stabilization of vertical-cavity top-surface-emitting lasers by inscription of fine metal-interlaced gratings”, Applied Physics Letters 66 (21), 2769-2771 (May 22, 1995).
Sun et al, “Polarization anisotropy of the photoluminescence of M-plane (In,Ga)n/GaN multiple quantum wells”, Applied Physics Letters 82(22), 3850-3852 (Jun. 2, 2003).
European Search Report, 6 pages.
H. De Neve et al., “Recycling of guided mode light emission in planar microcavity light emitting diodes,” Apl., Phys. Lett. vol. 70, No. 7, (1997), pp. 799-801.
Response to Final Office Action mailed to USPTO on Sep. 27, 2007, for U.S. Appl. No. 10/804,314, thirteen pages.
Final Office Action mailed on Jun. 28, 2007, for U.S. Appl. No. 10/804,314, nine pages.
Request for Continued Examination (RCE) including Response to Office Action mailed to USPTO on May 14, 2007, for U.S. Appl. No. 10/804,314, fifteen pages.
Final Office Action mailed on Mar. 21, 2007, for U.S. Appl. No. 10/804,314, twenty one pages.
Response to Office Action mailed to USPTO on Nov. 30, 2006, for U.S. Appl. No. 10/804,314, nineteen pages.
Final Office Action mailed on Aug. 22, 2006, for U.S. Appl. No. 10/804,314 seventeen pages.
Interview Summary mailed to USPTO on Aug. 15, 2006, for U.S. Appl. No. 10/804,314 one page.
Final Office Action mailed on Jun. 7, 2006, for U.S. Appl. No. 10/804,314 sixteen pages.
Response to Office Action including Terminal Disclaimer mailed to USPTO on Mar. 15, 2006, for U.S. Appl. No. 10/804,314, fifteen pages.
Non-Final Office Action mailed on Dec. 15, 2005, for U.S. Appl. No. 10/804,314, fifteen pages.
Response to Office Action (Election/Restriction) mailed to USPTO on Oct. 28, 2005, for U.S. Appl. No. 10/804,314, one page.
Non-Final Office Action (Election/Restriction) mailed on Sep. 30, 2005, for U.S. Appl. No. 10/804,314, five pages.
Response to Office Action (Election/Restriction) mailed to USPTO on Aug. 18, 2005, for U.S. Appl. No. 10/804,314, twelve pages.
Non-Final Office Action (Election/Restriction) mailed on Jul. 27, 2005, for U.S. Appl. No. 10/804,314, five pages.
Yue Jun Sun et al., “Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells”, Applied Physics Letters, vol. 82, No. 22, Jun. 2, 2003, pp. 3850-3852.
Yue Ju Sun et al., “Nonpolar InxGa1-xN/GaN(1100) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy”, Physical Review B 67, 041306(R) (2003), The American Physical Society, 4 pages.
Epler John E.
Gardner Nathan F.
Kim James C.
Krames Michael R.
Wierer Jr. Jonathan J.
Koninklijke Philips Electronics , N.V.
Mondt Johannes P
Philips Lumileds Lights Co., LLC
LandOfFree
Semiconductor light emitting devices including in-plane... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting devices including in-plane..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting devices including in-plane... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4160420