Semiconductor light emitting device with carrier diffusion suppr

Details Semiconductor light emitting device with carrier diffusion suppr Semiconductor light emitting device with carrier diffusion suppr

1998-01-28

2000-07-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 372 43, 372 45, 372 46, H01L 3300, H01S 318, H01S 319

Patent

active

060842512

ABSTRACT:
Disclosed is a semiconductor light emitting device improved in static characteristics such as operational current and prolonged in service life. On an n-type GaAs substrate are sequentially grown an n-type GaAs buffer layer having a thickness of 0.3 .mu.m; an n-type AlGaInP cladding layer having a thickness of 1 .mu.m; and an active layer having a MQW structure of GaInP/AlGaInP. Then, a carrier diffusion suppressing layer having a thickness of 50 nm is grown on the active layer at a reduced V/III ratio. On the carrier diffusion suppressing layer are sequentially grown a p-type AlGaInP cladding layer having a thickness of 1 .mu.m; a p-type GaInP layer having a thickness of 0.1 .mu.m; and a p-type GaAs current cap layer having a thickness of 0.3 .mu.m. Then, the p-type AlGaInP cladding layer, p-type GaInP layer, and p-type GaAs current cap layer are selectively etched by typically photolithography, to form a mesa structure, and an n-type GaAs current cap layer is grown to be laminated on both sides of the mesa structure, to form a semiconductor light emitting device.

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