Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2009-08-13
2011-10-04
Reames, Matthew (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE33028
Reexamination Certificate
active
08030109
ABSTRACT:
A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019cm−3or less, and the impurity concentration of aluminum in the active layer is 1×1018cm−3or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.
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Hino Tomonori
Mitomo Jugo
Narui Hironobu
Sato Yasuo
Yokozeki Mikihiro
Reames Matthew
SNR Denton US LLP
Sony Corporation
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