Semiconductor light emitting device, its manufacturing...

Details Semiconductor light emitting device, its manufacturing... Semiconductor light emitting device, its manufacturing...

2007-04-17

2007-04-17

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C257SE21001

Reexamination Certificate

active

10494972

ABSTRACT:
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

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patent: WO 03/019678 (2003-03-01), None

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