Semiconductor light emitting device integral type...

Details Semiconductor light emitting device integral type... Semiconductor light emitting device integral type...

2006-02-21

2006-02-21

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S079000, C257S088000, C257S098000, C257S099000, C257S103000

Reexamination Certificate

active

07002182

ABSTRACT:
A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO2film or the like is formed on the underlying n-type GaN layer. An n-type GaN layer having a hexagonal pyramid shape is selectively grown on a portion, exposed from an opening of the growth mask, of the underlying n-type GaN layer. The growth mask is removed by etching, and then an active layer and a p-type GaN layer are sequentially grown on the entire substrate so as to cover the hexagonal pyramid shaped n-type GaN layer, to form a light emitting device. An n-side electrode and a p-side electrode are then formed.

REFERENCES:
patent: 6881982 (2005-04-01), Okuyama et al.
patent: 2002/0074561 (2002-06-01), Sawaki et al.
patent: 2003/0087467 (2003-05-01), Oohata et al.
patent: WO 02/07231 (2004-01-01), None

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