Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-01
2006-08-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S078000
Reexamination Certificate
active
07084422
ABSTRACT:
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.
REFERENCES:
patent: 4819036 (1989-04-01), Kuroda et al.
patent: 5684309 (1997-11-01), McIntosh et al.
Jones, K. A., et al., “Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlattice.” Appl. Phys. 76 (3), Aug. 1, 1994, pp. 1609-1616.
Maier, M. , et al., “Composition analysis of molecular beam epitaxy grown InyGa1—yAs/GaAs/AlxGa1−xAs quantum wells by determination of film thickness.” J. Appl. Phys. 73 (8), Apr. 15, 1993, 0021-8979/93/083820-07, American Institute of Physics, pp. 3820-3826.
Pavesi, L. et al., “Photoluminescence of AlxGa1−xAs alloys.” J. Appl. Phys. 75 (10), 0021-8979/94/75(10)4779/64, May 15, 1994.
Ishii Kazuhisa
Kawaguchi Keizo
Maruyama Tsuyoshi
Sasakura Ken
Tomita Shotaro
Frishauf Holtz Goodman & Chick P.C.
Nguyen Thinh T
Stanley Electric Co. Ltd.
LandOfFree
Semiconductor light emitting device having quantum well... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device having quantum well..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device having quantum well... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3665972