Semiconductor light emitting device having a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S088000, C257S095000, C257S098000, C257S099000, C257S103000

Reexamination Certificate

active

06998645

ABSTRACT:
Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

REFERENCES:
patent: 6881982 (2005-04-01), Okuyama et al.
patent: 2005/0161661 (2005-07-01), Okuyama et al.

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