Semiconductor light emitting device having a protecting device

Details Semiconductor light emitting device having a protecting device Semiconductor light emitting device having a protecting device

1998-01-06

2000-04-25

Le, Que T.

Radiant energy

Photocells; circuits and apparatus

Solid state light source

257 84, 257 99, 257603, H01L 2715

Patent

active

060547162

ABSTRACT:
A semiconductor light emitting device incorporates therein with (a) a light emitting portion formed by semiconductor overlying layers including a first conductivity layer and a second conductivity layer in order to a light emitting layer, and (b) a protecting element portion provided in electrical connection between said first conductivity type layer and said second conductivity type layer so that said light emitting portion is protected against at least a reverse voltage applied to said light emitting portion. The light emitting portion and the protecting element portion can be formed by separate chips or in one chip having the both. They are formed into a lamp-type or chip-type light emitting device. The incorporation of the protecting element increase the reverse-voltage resistance for a compound semiconductor, such as galium-itride or the like, that is less resistive to reverse voltages applied. If a zener diode is employed as a protecting element, the protection is also available against high forward voltages. Therefore, it is possible to prevent against damages due to static electricity even during mafacture stages.

REFERENCES:
patent: 5798536 (1998-08-01), Tsutsui
patent: 5914501 (1999-06-01), Antle et al.

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