Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-08-02
2011-08-02
Parker, Ken A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S014000, C257S094000, C257SE33001
Reexamination Certificate
active
07989820
ABSTRACT:
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
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Birch & Stewart Kolasch & Birch, LLP
Diaz José R
LG Innotek Co. Ltd.
Parker Ken A
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