Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-09-27
2009-06-16
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S094000, C257S096000, C257S102000, C257SE29072, C257SE29168, C257SE29248, C257SE33008, C257SE33033, C257SE33065
Reexamination Certificate
active
07547910
ABSTRACT:
Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107cm−2or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0<X<0.14, X: strained composition) region. The barrier layers (21) include an un-doped InYGa1-YN (0≦Y≦0.05, Y: strained composition, Y<X) region. Herein, indium composition X is indicated as strained composition, not as relaxation composition, in the embodiments of the present invention.
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Akita Katsushi
Katayama Koji
Kitabayashi Hiroyuki
Kyono Takashi
Yoshizumi Yusuke
Judge James W.
Sumitomo Electric Industries Ltd.
Tran Long K
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