Semiconductor light-emitting device and method for making same

Details Semiconductor light-emitting device and method for making same Semiconductor light-emitting device and method for making same

2011-04-05

2011-04-05

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S086000, C257SE33048, C257SE33051

Reexamination Certificate

active

07919784

ABSTRACT:
One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.

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S. M. Sze “Semiconductor devices. Physics and Technology. 2nd Edition”—© 2002 John Wiley and Sons, p. 292, fig. 10.

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