Manufacturing method of magnetoresistive effect element

Details Manufacturing method of magnetoresistive effect element Manufacturing method of magnetoresistive effect element

2011-05-31

2011-05-31

Kim, Paul D (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603130, C029S603140, C029S603160, C029S603180, C216S022000, C216S048000, C360S324100, C360S324110, C360S324120, C360S324200, C427S127000, C427S128000, C427S129000, C427S130000, C427S131000

Reexamination Certificate

active

07950135

ABSTRACT:
A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.

REFERENCES:
patent: 6353318 (2002-03-01), Sin et al.
patent: 6421212 (2002-07-01), Gibbons et al.
patent: 6669983 (2003-12-01), Kagami et al.
patent: 7173797 (2007-02-01), Sbiaa
patent: 7333304 (2008-02-01), Gill et al.
patent: 10-021511 (1998-01-01), None
patent: 2002-151756 (2002-05-01), None
patent: 2002-299726 (2002-10-01), None
patent: 2003-086861 (2003-03-01), None
patent: 2004-031544 (2004-01-01), None
patent: 2004-103809 (2004-04-01), None
Japanese Patent Office citation in copending application, Apr. 22, 2008.

Affiliated with

Also associated with

Rating

Manufacturing method of magnetoresistive effect element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of magnetoresistive effect element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of magnetoresistive effect element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2704579