Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-06
2007-02-06
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S102000, C257S079000
Reexamination Certificate
active
10717557
ABSTRACT:
A semiconductor light emitting device includes a semiconductor multilayer structure comprising a plurality of Group III–V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure. The transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, which semiconductor has an interface with the transparent electrode. Therefore, contact resistance between the transparent electrode and the semiconductor having the interface with the transparent electrode is decreased.
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Tamura Satoshi
Ueda Tetsuzo
McDermott Will & Emery LLP
Rose Kiesha
Smith Zandra V.
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