Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-23
2008-12-30
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S079000
Reexamination Certificate
active
07470608
ABSTRACT:
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate11; a u-GaN layer12that is formed on top of the substrate11and that comprises a plurality of concave portions121formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer13formed on the u-Ga layer12; a layered structure that is formed on the u-GaN layer13comprises an n-GaN layer15, an active layer16, and a p-GaN layer19; an n-type electrode24formed on the n-GaN layer15exposed by removing a potion of the layered structure; and a transparent p-type electrode20formed on the p-GaN layer19, wherein the p-type electrode20is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer13and the concave portions121.
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Ishibashi Akihiko
Koike Susumu
Ohnaka Kiyoshi
Yokogawa Toshiya
Le Thao P.
McDermott Will & Emery LLP
Panasonics Corporation
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