Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-11-14
2006-11-14
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S046000, C438S044000, C438S047000, C438S481000, C438S680000, C257S190000, C257S079000, C257S096000
Reexamination Certificate
active
07135348
ABSTRACT:
A semiconductor light emitting device is fabricated by forming a mask having an opening on a substrate, forming a crystal layer having a tilt crystal plane tilted from the principal plane of the substrate by selective growth from the opening of the mask, and forming, on the crystal layer, a first conductive type layer, an active layer, and a second conductive type layer, which extend within planes parallel to the tilt crystal plane, and removing the mask. The semiconductor light emitting device can be fabricated without increasing fabrication steps while suppressing threading dislocations extending from the substrate side and keeping a desirable crystallinity. The semiconductor light emitting device is also advantageous in that since deposition of polycrystal on the mask is eliminated, an electrode can be easily formed, and that the device structure can be finely cut into chips.
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Biwa Goshi
Okuyama Hiroyuki
Depke Robert J.
Gebremariam Samuel
Owens Douglas W.
Rockey, Depke, Lyons & Kitzinger LLC
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