Semiconductor light emitting device and fabrication method...

Details Semiconductor light emitting device and fabrication method... Semiconductor light emitting device and fabrication method...

2006-04-18

2006-04-18

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S095000, C257S102000, C257S103000

Reexamination Certificate

active

07030421

ABSTRACT:
Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.

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patent: 6072197 (2000-06-01), Horino et al.
patent: 6635901 (2003-10-01), Sawaki et al.
patent: 09-092881 (1997-04-01), None
patent: 09-162444 (1997-06-01), None
patent: 10-312971 (1998-11-01), None

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