Semiconductor light emitting device and fabrication method...

Details Semiconductor light emitting device and fabrication method... Semiconductor light emitting device and fabrication method...

2008-06-06

2011-10-18

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S096000, C257SE33068, C438S026000, C438S029000, C438S042000

Reexamination Certificate

active

08039864

ABSTRACT:
A high luminance semiconductor light emitting device and a fabrication method for such semiconductor light emitting device are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate.The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal buffer layer, and a second metal buffer layer (4) and a second metal layer (5) disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (12), a metal contact layer (11) disposed on the third metal layer, a p type cladding layer (10) disposed on the metal contact layer, a multi-quantum well layer (9) disposed on the p type cladding layer, an n type cladding layer (8) disposed on the multi-quantum well layer, and a window layer (7) disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer (1) and the third metal layer (12).

REFERENCES:
patent: 5376580 (1994-12-01), Kish et al.
patent: 7705465 (2010-04-01), Kimura et al.
patent: 06-302857 (1994-10-01), None
patent: 11-103090 (1999-04-01), None
patent: 2004-146593 (2004-05-01), None
patent: 2005-044887 (2005-02-01), None
patent: 2005-223207 (2005-08-01), None
patent: 2005-236304 (2005-09-01), None
patent: 2005-353809 (2005-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor light emitting device and fabrication method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device and fabrication method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device and fabrication method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4285685