Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1995-07-28

1997-08-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 94, 257103, H01S 319

Patent

active

056573367

ABSTRACT:
A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.

REFERENCES:
patent: 4955031 (1990-09-01), Jain
patent: 5274248 (1993-12-01), Yokogawa et al.
patent: 5291507 (1994-03-01), Haase et al.
patent: 5296718 (1994-03-01), Fujita et al.
patent: 5373521 (1994-12-01), Takahashi
patent: 5471067 (1995-11-01), Ikeda et al.

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