Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-04-22
1998-05-12
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257102, 257 96, 257 97, 372 50, 372 45, H01L 3300, H01S 319
Patent
active
057510210
ABSTRACT:
A semiconductor light-emitting device of the present invention includes a nitride type alloy semiconductor layer. The nitride type alloy semiconductor layer is made of Al.sub.a Ga.sub.b In.sub.1-a-b N (0.ltoreq.a.ltoreq.1, 0.ltoreq.b .ltoreq.1, a+b.ltoreq.1) including at least one selected from the group consisting of Sc, Ti, V, Cr, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.
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