Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-02-18
2009-08-04
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S089000, C257S090000, C257S096000
Reexamination Certificate
active
07569863
ABSTRACT:
A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of, e.g., undoped In0.4Ga0.6N having a forbidden band width of 1.9 eV and formed on a p-type semiconductor layer to have a configuration consisting of a plurality of mutually spaced-apart islands.
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English Language Abstract of JP 9-232627, published Sep. 5, 1997.
English Language Abstract of JP 2000-261034, Sep. 22, 2000.
U.S. Appl. No. 11/060,278 to Ueda, filed Feb. 18, 2005.
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English language abstract of JP 2003-037291.
English language abstract of JP 2002-368265.
English language abstract of JP 08-288549.
English language abstract of JP 2002-171000.
English language abstract of JP 2002-111072.
English language abstract of JP 2003-234505.
English language abstract of JP 2000-091703.
English language abstract of JP 2002-299686.
English language abstract of JP 10-261818.
English language abstract of JP 2000-082849.
English language abstract of JP 2002-217450.
English language abstract of JP 2003-318443.
English language abstract of JP 2003-347587.
English language abstract of JP 2000-101139.
English language abstract of JP 2002-009335.
English language abstract of JP 2002-319703.
English language abstract of JP 2003-068745.
English language abstract of JP 2003-243726.
English language abstract of JP 2002-198561.
Greenblum & Bernstein P.L.C.
Hu Shouxiang
Panasonic Corporation
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