Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1997-09-08

2000-03-21

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 96, 257 97, 257103, H01L 2906, H01L 3300

Patent

active

060405880

ABSTRACT:
A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of In.sub.Y1 Ga.sub.1-Y1 N (Y1.gtoreq.0) and a quantum well layer being made of In.sub.Y2 Ga.sub.1-Y1 N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5793054 (1998-08-01), Nido

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