Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2006-10-31

2006-10-31

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S101000, C257S102000, C257S103000

Reexamination Certificate

active

07129525

ABSTRACT:
Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n-type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer (3) and the active layer (5), and the c-axis in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the c-axis in the active layer (5), are each greater than zero.

REFERENCES:
patent: 6639925 (2003-10-01), Niwa et al.
patent: 2002-076025 (2002-03-01), None
patent: 2002-326895 (2002-11-01), None

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