Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-03-22
2005-03-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S014000, C257S113000, C257S678000
Reexamination Certificate
active
06870191
ABSTRACT:
A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.
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Niki Isamu
Sano Masahiko
Shioji Shuji
Yamada Motokazu
Morrison & Foerster / LLP
Tran Mai-Huong
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