Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2005-04-19

2005-04-19

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S088000, C257S098000, C257S099000, C257S103000

Reexamination Certificate

active

06881982

ABSTRACT:
Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

REFERENCES:
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6320209 (2001-11-01), Hata et al.
patent: 11-312840 (1969-11-01), None
patent: 10-312971 (1998-03-01), None
patent: 11-186650 (1999-07-01), None

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