Active solid-state devices (e.g. – transistors – solid-state diode – Point contact device
Reexamination Certificate
2011-07-12
2011-07-12
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Point contact device
C257SE21113, C257SE21121
Reexamination Certificate
active
07977673
ABSTRACT:
To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained.The semiconductor layer includes a β-Ga2O3substrate1made of a β-Ga2O3single crystal, a GaN layer2formed by subjecting a surface of the β-Ga2O3substrate1to nitriding processing, and a GaN growth layer3formed on the GaN layer2through epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layer2and the GaN growth layer3match each other, and the GaN growth layer3grows so as to succeed to high crystalline of the GaN layer2, the GaN growth layer3having high crystalline is obtained.
REFERENCES:
patent: 6218207 (2001-04-01), Itoh et al.
patent: 6350666 (2002-02-01), Kryliouk
patent: 2002/0040722 (2002-04-01), Okajima
patent: 2002/0058162 (2002-05-01), Shibata et al.
patent: 2003/0107098 (2003-06-01), Ota et al.
patent: 2004/0007708 (2004-01-01), Ichinose et al.
patent: 1 367 657 (2003-12-01), None
patent: 2000-349336 (2000-12-01), None
patent: 2000349336 (2000-12-01), None
patent: 2002-029713 (2002-01-01), None
patent: 2002-187800 (2002-07-01), None
patent: 2002-270525 (2002-09-01), None
patent: 2003-046128 (2003-02-01), None
patent: 2003-46128 (2003-02-01), None
Yang, Ying-Ge, “Preparation and Structural Properties for GaN Films Grown on Si (1 1 1) by Annealing”, Applied Surface Science, vol. 193, 2002, pp. 254 -260.
Park et al. “Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN Film” (2004) Journal of Crystal Growth pp. -6.
Yang et al. “Preparation and structural porperties for FaN films grown on Si (111) by annealing” (2002) Applied Surface Science pp. 254-260.
European Search Report dated Nov. 16, 2009.
Japanese Office Action dated Jul. 20, 2010 (with partial English translation).
Chinese Office Action dated May 8, 2009 with an English-Language Translation.
Aoki Kazuo
Garcia Villora Encarnacion Antonia
Ichinose Noboru
Shimamura Kiyoshi
Fahmy Wael M
Koha Co., Ltd.
McGinn IP Law Group PLLC
Salerno Sarah K
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