Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-06-06
2006-06-06
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S200000
Reexamination Certificate
active
07056778
ABSTRACT:
A process for forming strained semiconductor layers. The process include flowing a chlorine bearing gas (e.g. hydrogen chloride, chlorine, carbon tetrachloride, and trichloroethane) over the wafer while heating the wafer. In one example, the chorine bearing gas is flowed during a condensation process on a semiconductor layer that is used as a template layer for forming a strain semiconductor layer (e.g. strain silicon). In other examples, the chlorine bearing gas is flowed during a post bake of the wafer after the condensation operation.
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Barr Alexander L.
Liu Chun-Li
Nguyen Bich-Yen
Sadaka Mariam G.
Thean Voon-Yew
Dang Phuc T.
Dolezal David G.
Freescale Semiconductor Inc.
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