Semiconductor laser with lateral current conduction and...

Details Semiconductor laser with lateral current conduction and... Semiconductor laser with lateral current conduction and...

2005-09-13

2005-09-13

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06944199

ABSTRACT:
A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

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Maranowski, S.A. et al.: “AlxGa1-xAs-GaAs-InyGa1-yAs Quantum Well Heterostructure Lasers with Native Oxide Current-Blocking Windows Formed on Metallized Devices”, American Institute of Physics, Appl. Phys. Lett., vol. 64, No. 16, Apr. 18, 1994, pp. 2151-2153;.
Heerlein, J. et al.: “Highly Efficient Laterally Oxidized λ = 950nm InGaAs-AlGaAs Single Mode Lasers”, IEEE Journal of Selected Topics In Quantum Electronics, vol. 5, No. 3, May/Jun. 1999, pp. 701-706.
Maranowski, S.A. et al.: “Native-Oxide Defined In0.5(AlxGa1-x)0.5P Quantum Well Heterostructure Windows Lasers (660nm)”, American Institute of Physics, Applied Physics Letters 61, No. 14, Oct. 5, 1992, pp. 1688-1690.
Caracci, S.J. et al.: “High-Performance Planar Native-Oxide Buried-Mesa Index-Guided AlGaAs-GaAs Quantum Well Heterostructure Lasers”, American Institute of Physcis Letters 61, No. 3, Jul. 20, 1992, pp. 321-323.

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