Semiconductor laser with a self sustained pulsation

Details Semiconductor laser with a self sustained pulsation Semiconductor laser with a self sustained pulsation

1995-09-29

1997-03-11

Kunemund, Robert

Fishing, trapping, and vermin destroying

H01L 2120

Patent

active

056100965

ABSTRACT:
A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

REFERENCES:
patent: 4804639 (1989-02-01), Yablonovitch
patent: 5251225 (1993-10-01), Eglash et al.
patent: 5268328 (1993-12-01), Mori et al.
patent: 5358897 (1994-10-01), Valster et al.
patent: 5400354 (1995-03-01), Ludowise et al.
Nikkei Electronics, Aug. 31, 1981, pp. 76-79 w/translation.
"A New Self-Aligned Structure For (GaAl) As High Power Lasers With Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD" (Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. L498-L500).
Nikkei electronics, Aug. 31, 19981, pp. 76-79 (no translation).

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