Semiconductor laser passivation and overstressing

Details Semiconductor laser passivation and overstressing Semiconductor laser passivation and overstressing

1991-09-09

1992-05-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 8, 148DIG95, H01L 21 00, H01L 2166

Patent

active

051167670

ABSTRACT:
A method for imnproving the reliability of InGaAsP lasers in which the lasers are subjected to sulfide passivation so as to passivate defects on their facets. The lasers are then tested to determine whether any laser has an internal defect. For examples, all lasers can be tested at an electrostatic discharge (ESD) level which would cause any laser having an internal defect to fail. Failed lasers are discarded. The passivation greatly increases the ESD failure level for facet defects, and the ESD screening removes those lasers having internal defects. Thereby, those lasers remaining in the lot have greatly increased reliability to ESD.

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