Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-02-15
2008-10-28
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S474000, C438S475000, C257S631000, C257S640000, C372S049010
Reexamination Certificate
active
07442628
ABSTRACT:
A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.
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Kawata Toshiya
Kidoguchi Isao
Ueda Tetsuo
Yamane Keiji
Cao Phat X.
Kalam Abul
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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