Semiconductor laser manufacturing method

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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Details

C438S474000, C438S475000, C257S631000, C257S640000, C372S049010

Reexamination Certificate

active

07442628

ABSTRACT:
A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

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