Semiconductor laser manufacturing method

Details Semiconductor laser manufacturing method Semiconductor laser manufacturing method

2007-03-20

2007-03-20

Le, Thao X. (Department: 2814)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S474000, C438S475000, C257S631000, C257S640000, C372S049010

Reexamination Certificate

active

10931206

ABSTRACT:
A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

REFERENCES:
patent: 5022977 (1991-06-01), Matsuoka et al.
patent: 6067310 (2000-05-01), Hashimoto et al.
patent: 6096176 (2000-08-01), Horiike et al.
patent: 6618409 (2003-09-01), Hu et al.
patent: 6985504 (2006-01-01), Ueda et al.
patent: 2001/0015438 (2001-08-01), Callegari et al.
patent: 2004/0206308 (2004-10-01), Ahn et al.
patent: 09-148676 (1997-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor laser manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3763715