Semiconductor laser light emitting device

Details Semiconductor laser light emitting device Semiconductor laser light emitting device

2006-02-21

2006-02-21

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S043010, C372S046010

Reexamination Certificate

active

07003008

ABSTRACT:
Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1−xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15<x<0.30, so that the semiconductor laser light emitting device is configured as a weak index type pulsation semiconductor laser light emitting device; or the component ratio “x” of Al is specified at a value in a range of 0≦x≦0.15, so that the semiconductor laser light emitting device is configured as a gain guide type laser light emitting device.

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