Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-02-20
2007-02-20
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
10732240
ABSTRACT:
Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.
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Chae Su-hee
Kwak Joon-seop
Buchanan Ingersoll & Rooney P.C.
Flores-Ruiz Delma R.
Samsung Electronics Co,. Ltd.
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