Semiconductor laser diode and method for manufacturing the same

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S043010, C372S046010, C372S050100

Reexamination Certificate

active

07406111

ABSTRACT:
In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.

REFERENCES:
patent: 6136623 (2000-10-01), Hofstetter et al.
patent: 6174747 (2001-01-01), Ho et al.
patent: 6479325 (2002-11-01), Ozawa
patent: 6657237 (2003-12-01), Kwak et al.
patent: 7072374 (2006-07-01), Matsumura
patent: 2004/0174918 (2004-09-01), Kwak et al.
patent: 2005/0002428 (2005-01-01), Kwak et al.
patent: 2005/0170542 (2005-08-01), Matsumura
patent: 2006/0062267 (2006-03-01), Tanaka

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