Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-05-31
2005-05-31
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046012
Reexamination Certificate
active
06901097
ABSTRACT:
A semiconductor laser diode and a manufacturing for fabricating the same are provided. The semiconductor laser diode includes a substrate, masks that are formed at both sides of the substrate, a light generating layer that is formed on the substrate between the masks, current blocking layers that are formed on the masks, respectively, and first and second electrode that are formed on the bottom surface of the substrate and on the top surface of the light generating layer, respectively. The optical generating layer and the current blocking layer are simultaneously formed through single growth, and the current blocking layer confines current and light in a lateral direction in the light generating layer. Thus, a semiconductor laser diode manufacturing process can be simplified, and threshold current for laser oscillation can be lowered.
REFERENCES:
patent: 5070510 (1991-12-01), Konushi et al.
patent: 5373173 (1994-12-01), Ohata et al.
patent: 5656539 (1997-08-01), Motoda et al.
patent: 5864575 (1999-01-01), Ohiso et al.
patent: 5923691 (1999-07-01), Sato
patent: 5966396 (1999-10-01), Okazaki et al.
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6084901 (2000-07-01), Suzuki
patent: 6091083 (2000-07-01), Hata et al.
patent: 6127200 (2000-10-01), Ohiso et al.
patent: 6185238 (2001-02-01), Onomura et al.
patent: 6285694 (2001-09-01), Shigihara
patent: 6319742 (2001-11-01), Hayashi et al.
patent: 6420198 (2002-07-01), Kimura et al.
patent: 6456638 (2002-09-01), Fukunaga
patent: 6463088 (2002-10-01), Baillargeon et al.
patent: 6618412 (2003-09-01), Shigihara
patent: 6697404 (2004-02-01), Sato
patent: 2002/0001864 (2002-01-01), Ishikawa et al.
patent: 2002/0003914 (2002-01-01), Sakata
patent: 2002/0022288 (2002-02-01), Hayashi et al.
patent: 2002/0024981 (2002-02-01), Tojo et al.
patent: 0 507 516 (1992-10-01), None
patent: 61-003491 (1986-01-01), None
patent: 2000-058981 (2000-02-01), None
patent: 10-0265801 (2000-09-01), None
M. Ogura et al., “AlGaAs/GaAs buried quantum well laser diodes by one time selective metalorganic chemical vapor deposition growth on dielectric window strips,” Applied Physics Letters, American Institute of Physics, New York, US, vol. 62, No. 26, Jun. 28, 1993, pp. 3417-3419.
M. C. Wu et al., “Optical and Electrical Characteristics of GaAs/AlGaAs GRIN-SCH Lasers Grown Selectively by MBE on SiO2-Patterned Substrate,” International Electron Devices Meeting, Washington, Dec. 6-9, 1987, New York, US, IEEE, Dec. 6, 1987, pp. 909-912.
A. Jain et al., “Chemical Vapor Deposition of Copper from Hexafluoroacetylacetonato Copper(l) Vinyltrimethylsilane Deposition Rates, Mechanism, Selectivity, Morphology, and Resistivity as a Function of Temperature and Pressure,” Journal of the Electrochemical Society, Electrochemical Society, Inc., Manchester, New Hampshire, US, vol. 140, No. 5, May 1993, pp. 1434-1439.
Kim Tae-geun
Nam Ok-hyun
Burns Doane Swecker & Mathis L.L.P.
Harvey Minsun Oh
Nguyen Phillip
Samsung Electronics Co,. Ltd.
LandOfFree
Semiconductor laser diode and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser diode and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser diode and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3411528