Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Patent
1994-12-20
1997-08-19
Kunemund, Robert
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
438 41, H01L 21020
Patent
active
056588232
ABSTRACT:
A self-align structured laser diode and manufacturing method including the steps of forming a multiple epitaxy layer including an activation layer on a semiconductor substrate; forming a rectangular ridge on a top surface of the multiple epitaxy layer; depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having the ridge; depositing a photoresist on the passivation layer; exposing the entire photoresist on the top surface of the ridge or the portion of the entire photoresist overlapping the top surface of the ridge and the upper portion of the photoresist deposited on the side surface of the ridge perpendicular to the top surface of the ridge to a predetermined depth; removing the exposed portion of the photoresist; removing the exposed passivation layer; removing the photoresist that remains in both sides of the ridge; and forming a current injection layer in the top surface of the resultant structure.
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patent: 5124279 (1992-06-01), Goto
patent: 5208183 (1993-05-01), Chen et al.
patent: 5310697 (1994-05-01), Kan et al.
patent: 5376581 (1994-12-01), Shimoyama et al.
Kunemund Robert
Samsung Electronics Co,. Ltd.
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