Semiconductor laser diode

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S050124, C372S050121

Reexamination Certificate

active

07463665

ABSTRACT:
A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer.

REFERENCES:
patent: 4961197 (1990-10-01), Tanaka et al.
patent: 6387721 (2002-05-01), Hashimoto et al.
patent: 6618420 (2003-09-01), Gen-Ei et al.
patent: 2003/0138015 (2003-07-01), Sato et al.
patent: 5-167177 (1993-07-01), None
patent: 2000-174385 (2000-06-01), None

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