Coherent light generators – Particular beam control device – Optical output stabilization
Reexamination Certificate
2007-10-23
2007-10-23
Nguyen, Dung (Michael) T. (Department: 2828)
Coherent light generators
Particular beam control device
Optical output stabilization
Reexamination Certificate
active
11068561
ABSTRACT:
A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
REFERENCES:
patent: 2569347 (1951-09-01), Shockley
patent: 4485391 (1984-11-01), Poulain et al.
patent: 4710936 (1987-12-01), Shibata et al.
patent: 4845535 (1989-07-01), Yamanishi et al.
patent: 5239550 (1993-08-01), Jain
patent: 5293050 (1994-03-01), Chapple-Sokol et al.
patent: 5334854 (1994-08-01), Ono et al.
patent: 5389804 (1995-02-01), Yokoyama et al.
patent: 5399880 (1995-03-01), Chand
patent: 5414273 (1995-05-01), Shimura et al.
patent: 5780880 (1998-07-01), Enquist
patent: 5796714 (1998-08-01), Chino et al.
patent: 6337494 (2002-01-01), Ryum et al.
patent: 6479844 (2002-11-01), Taylor
patent: 6737684 (2004-05-01), Takagi et al.
patent: 2002/0030195 (2002-03-01), Yoshii et al.
P. Grossman, and J. Choma, Jr., “Large Signal Modeling of HBT's Including Self-Heating and Transit Time Effects” IEEE Transactions On Microwave Theory And Techniques, vol. 40, No. 3, Mar. 1992.
Y. Mori, J. Shibata, Y. Sasai, H. Serizawa, and T. Kajiwara, “Operation Principle Of The InGaAsP/InP Laser Transistor”, Appl. Phys. Lett. 47(7), Oct. 1, 1985.
J. Genoe, C. Van Hoof, K. Fobelets, R. Mertens, and G. Borghs, “pnp Resonant Tunneling Light Emitting Transistor” Appl. Phys. Lett. 62 (9), Aug. 31, 1992.
P. Berger, N. Chand, and N. Dutta, “An AIGaAs Double-Heterojuction Bipolar Transistor Grown By Molecular-Beam Epitaxy”, Appl. Phys. Lett. 59 (9), Aug. 26, 1991.
E. Zanoni, L. Vendrame, and P. Pavan, “Hot-Electron Electroluminescence in AIGaAs/GaAs Heterojunction Bipolar Transistors”, Appl. Phys. Lett. 62(4), Jan. 25, 1993.
M. Harris, B. Wagner, S. Halpern and M. Dobbs, “Full Two-Dimensional Electroluminescent (EL) Analysis of GaAs/AIGaAs HBTs”, IEEE 99CH36296. 37thAnnual International Reliability Physics Symposium, San Diego., California, 1999.
K. Wang, P. Asbeck, M. Chang, G. Sullivan, and D. Millar, “Noninterfering Optical Method Of HBT Circuit Evaluation”, Electronics Letters, vol. 25 No. 17, Aug. 17, 1989.
J. Shibata, Y. Mori, Y. Sasai, N. Hase, H. Serizawa, and T. Kahwara “Fundamental Characteristics Of An InGaAsP/InP Laser Transistor”, Electronic Letters, vol. 21, p. 98, 1985.
J. Bardeen and W.H. Brattain, “The Transistor, A Semi-conductor Triode,” Physical Review 74, 230-234 (1948).
W. Shockley, “The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors,” Bell System Technology Journal 28, 435-489 (1949).
R.N. Hall, G.E. Fenner, J.D. Kingsley, T.J. Soltys, and R.O. Carlson, “Coherent Light Emission From GaAs Junctions,” Phys. Rev. Lett., vol. 9. pp. 366-368, Nov. 1, 1962.
M.I. Nathan, W.P. Dumke, G. Burns, F.H. Dill, Jr., and G. Lasher, “Stimulated Emission of Radiation From GaAs p-n Junction,” Appl. Phys. Lett., vol. 1, pp. 62-64. Nov. 1962.
N. Holonyak, Jr. and S.F. Bevacqua, “Coherent (Visible) Light Emission From GaAs1-xPxJunctions,” Appl. Phys. Lett., vol. 1, pp. 82-83, Dec. 1962.
T.M. Quist, R.H. Rediker, R.J. Keyes, W.E. Krag, B. Lax, A.L. McWhorter, and H.J. Zeiger, “Semiconductor Maser of GaAs,” Appl. Phys. Lett, vol. 1. pp. 91-92, Nov. 1962.
H. Kroemer, “Theory Of A Wide-Gap Emitter For Transistors,” Proceedings of the IRE 45, 1535-1537 (1957).
W. Hafez, J.W. Lai and M. Feng, “InP/InGaAs SHBTs with 75 nm Collector and fr>500 GHz”, Electronic Letters, vol. 39, No. 20, Oct. 2003.
W. Hafez, J.W. Lai, and M. Feng “Record fTand fT+ fMAXPerformance of InP/InGaAs Single Heterojunction Bipolar Transistors,” Electronics Letters, May 2003.
W. Hafez, J.W. Lai, and M. Feng. “Sub-micron InP/InGaAs Single Heterojuction Bipolar Transistors With fTof 377 GHz,” IEEE Electron Device Letters, May 2003.
W. Hafez, J.W. Lai and M. Feng, “Vertical Scaling of 0.25 um Emitter InP/InGaAs Single Heterojuction Bipolar Transistors With fTof 452 GHz,” IEEE Electron Devices Letters, Jul. 2003.
P. Enquist, A. Paolella, A.S. Morris, F.E. Reed, L. DeBarros, A.J. Tessmer, and J.A. Hutchby, “Performance Evaluation Of Heterojunction Bipolar Transistors Designed For High Optical Gain”, Research Triangle Institute, Research Triangle Park, NC, ARL, Research Laboratory, Ft. Monmouth, NJ, Applied Research and Technology, Wake Forest, NC, , IEEE, pp. 278-287, 1995.
Yukihiko Arai, Masaaki Sakuta, Hiroshi Takano, Takashi Usikubo, Ryozo Furukawa, and Masao Kobayashi, “Optical Devices From AIGaAs-GaAs HBTs Heavily Doped With Amphoteric Si”, IEEE Transactoins On Electron Devices, pp. 632-638, Vo. 42. No. 4, Apr. 1995.
G.W. Taylor, R.S. Mand, J.G. Simmons, and A.Y. Cho, “Ledistor—A Three-Terminal Double Heterostructure Optoelectronic Switch”, Appl. Phys. Lett. 50(6), Feb. 9, 1987.
N. Holonyak “Quantum-Well And Superlattice Lasers: Fundamental Effects” pp. 1-18, in “The Physics Of Submicron Structures”, Plenum Press, 1984.
V. Ryzhii, M. Willander, M. Ryzhii and I. Khmyrova, “Heterostructure Laser-Transistors Controlled By Resonant-Tunneling Electron Extraction”, Semicond. Sci. Technol. 12 (1997) 431-438.
V. Ryzhi and I. Khmyrova, “Bistability Effect In Laser-Transistor Resonant-Tunneling Structure” Solid-State Electronics vol. 37 Nos. 4-6 pp. 1259-1262, 1994.
R. Bhat, W.-P. Hong, C. Caneau, M. A. Koza, C.-K. Nguyen, and S. Goswami, “InP/GaAsSb/InP And InP/GaAsSb/InGaAsp Double Heterojuction Bipolar Transistors With A Carbon-Doped Base Grown By Organometallic Chemcial Vapor Deposition” Appl. Phys. Lett. 68, 985 (1996).
T. McDermott, E. R. Gertner, S. Pittman, C. W. Seabury, and M. F. Chang, “Growth And Doping Of GaAsSb Via Metalorganic Chemical Vapor Deposition For InP Heterojuction Bipolar Transistors” Appl. Phys. Lett. 58, 1386 (1996).
Dvorak, C. R. Bolognesi, O. J. Pitts, and S. P. Watkins, “300 GHz InP/GaAsSb/InP Double HBTs With High Current Capability Any BVCEO≧ 6 V” IEEE Elec. Dev. Lett. 22, 361 (2001).
V. de Walle, “Band Lineups And Deformation Potentials In The Model-Solid Theory” Physical Review B 39, 1871 (1989).
M. Feng, N. Holonyak, Jr. and W. Hafez, “Light-Emitting Transistor: : Light Emission From InGaP/GaAs Heterojuction Bipolar Transistors”, Appl. Phys. Lett. 84, 151, Jan. 5, 2004.
Chan Richard
Feng Milton
Holonyak, Jr. Nick
Walter Gabriel
Nguyen Dung (Michael) T.
Novack Martin
The Board of Trustees of the University of Illinois
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