Coherent light generators – Particular active media – Semiconductor
Patent
1986-09-03
1989-02-07
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 20, 372 29, 372 45, 372 96, H01S 319
Patent
active
048036927
ABSTRACT:
It is possible to narrow the emission spectrum linewidth of a semiconductor laser device by coupling optically an external resonator with one end surface of the semiconductor laser. However, the structure of the external resonator should match the phase of the light emitted by the laser. Heretofore, this matching has been effected by adjusting the length of the external resonator, and hence productivity and reproducibility have not been good. According to this invention, characteristics of the external resonator can be adjusted electrically to be matched with the phase of the emitted light owing to the fact that the external resonator is made of a material, whose refractive index can be varied electrically. Therefore the semiconductor laser device according to this invention is very practical.
REFERENCES:
patent: 4485474 (1984-11-01), Osterwalder
patent: 4631730 (1986-12-01), Miller
The Preliminary Reports for the National Meeting of the Institute of Electronics and Communication Engineers of Japan 4, 1985, p. 22.
IEEE J. Quantum Electron, vol. QE-16, (1980) p. 347.
Patent Abatracts of Japan, vol. 9, No. 251 (E-348) [1974], 8th Oct. 1985; & JP-A-60 100 491 (Nippon Denshin Denwa Kosha) 04-06-1985.
I.E.E.E. Spectrum, vol. 20, No. 12, pp. 38-45, Dec. 1983, IEEE, New York, US; T. E. Bell: "Single-Frequency Semiconductor Lasers".
Laser Focus, vol. 13, No. 8, Aug. 1977, pp. 72-75, Newton, Mass., US; D. Anafi et al.: "Shifting or Stabilizing Laser Frequency with E-O Modulator in or Outside Cavity".
Matsumura Hiroyoshi
Sakano Shinji
Epps Georgia Y.
Hitachi , Ltd.
Sikes William L.
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