Semiconductor laser device with compressively stressed barrier l

Details Semiconductor laser device with compressively stressed barrier l Semiconductor laser device with compressively stressed barrier l

1992-09-29

1994-08-09

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

053373260

ABSTRACT:
A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.

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