Semiconductor laser device including transparent electrode

Details Semiconductor laser device including transparent electrode Semiconductor laser device including transparent electrode

2007-09-05

2010-11-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular pumping means

Electrical

C372S046010

Reexamination Certificate

active

07826512

ABSTRACT:
It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate1, an n-type GaN layer2, an n-type AlGaN cladding layer3, a n-type GaN guide layer4, an InGaN multiple quantum well active layer5, an undoped-GaN guide layer6, a p-type AlGaN electron overflow suppression layer7, a p-type GaN guide layer8, a SiO2blocking layer9, an Ni/ITO cladding layer electrode10as a transparent electrode, a Ti/Au pad electrode11, and a Ti/Al/Ni/Au electrode12. The SiO2blocking layer9is formed above the InGaN multiple quantum well active layer5so as to have an opening. The Ni/ITO cladding layer electrode10is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

REFERENCES:
patent: 5567960 (1996-10-01), Ishibashi et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 2001/0042860 (2001-11-01), Hata et al.
patent: 2003/0052326 (2003-03-01), Ueda et al.
patent: 2004/0184497 (2004-09-01), Kneissl et al.
patent: 8-97507 (1996-04-01), None
English Language Abstract of JP 8-97507.
S. Nakamura et al., “the Blue Laser Diode”, Springer-Verlag Berlin Heidelberg New York, pp. 254-259 (1997).

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