Semiconductor laser device for use as a light source of an optic

Coherent light generators – Particular active media – Semiconductor

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372 45, H01S 319

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active

057517568

ABSTRACT:
A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.

REFERENCES:
patent: 4800565 (1989-01-01), Yoshizawa et al.
patent: 5065404 (1991-11-01), Okajima et al.
patent: 5208824 (1993-05-01), Tsang
patent: 5297158 (1994-03-01), Naitou et al.
patent: 5416790 (1995-05-01), Yodoshi et al.

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