Semiconductor laser device and method for fabricating the same

Details Semiconductor laser device and method for fabricating the same Semiconductor laser device and method for fabricating the same

2006-08-28

2008-10-07

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050120, C372S050121, C372S050124

Reexamination Certificate

active

07433380

ABSTRACT:
In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

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patent: 5084893 (1992-01-01), Sekii et al.
patent: 6058124 (2000-05-01), Sun et al.
patent: 6546035 (2003-04-01), Imafuji et al.
patent: 11-186651 (1999-07-01), None

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