Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-03-08

1991-06-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

050220373

ABSTRACT:
A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an active layer for laser oscillation, and a pair of cleavage planes on the side of the multi-layered structure, wherein a graded-band-gap layer is formed on at least one of the cleavage planes, the graded-band-gap layer having a forbidden band gap which increases gradually with an increase in the distance from the cleavage plane, and the surface of the graded-band-gap layer constituting the end facet.

REFERENCES:
Journal of Applied Physics, vol. 46, No. 8, Aug. 1975, pp. 3542-3546, M. Konagi et al., "Graded-band-gap . . . Heterojunction Solar Cells".

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1032574