Semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 43, H01S 319

Patent

active

051739143

ABSTRACT:
A semiconductor laser device having an active region with a wide and uniform width which supports propagation of fundamental and higher modes of oscillation includes a reflecting film coating having a reflectivity smaller than a reflectivity determined by the differences between the refractive index of the semiconductor that forms the active layer and air and having no spatial distribution of reflectivity in the direction of the width of the active region disposed on an emitting facet of the laser, and a reflecting film coating having a highest reflectivity at the center of the width of the active region, the reflectivity decreasing at the sides of the center, disposed on the facet opposite to the emitting facet. As a result, a semiconductor laser oscillating in the fundamental mode with high power light output is provided.

REFERENCES:
patent: 4998258 (1991-05-01), Ikeda et al.
Ackley et al., "Phase-Locked Injection Laser Arrays With Integrated Phase Shifters", RCA Review, vol. 44, Dec. 1983, pp. 625-633.

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