Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-06-24
1998-05-12
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438397, 438253, 438254, 148DIG14, H01L 2120
Patent
active
057504318
ABSTRACT:
A method for fabricating a stacked capacitor is disclosed. The method includes forming successively a first dielectric layer, a first polysilicon layer and an insulation layer over a semiconductor substrate. The three layers are patterned to have a window in which a portion of the substrate is exposed. A second polysilicon layer is deposited over the insulation layer and filled in the window. The second polysilicon layer and the insulation layer are patterned to form an island. A dielectric spacer around the island is formed. Moreover, the second polysilicon layer over the insulation layer and the first polysilicon uncovered by the island are removed. The insulation layer in the island is then removed to leave a polysilicon rod surrounded by the dielectric spacer. Polysilicon spacers around the polysilicon rod and the dielectric spacer are formed and the dielectric spacer is removed, thereby forming a lower electrode. Finally, a second dielectric layer and an upper electrode are formed over the lower electrode.
REFERENCES:
patent: 5432116 (1995-07-01), Keum et al.
patent: 5543346 (1996-08-01), Keum et al.
patent: 5550076 (1996-08-01), Chen
patent: 5665626 (1997-09-01), Cronin
Nguyen Tuan H.
Powerchip Semiconductor Corp.
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