Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2009-02-25

2010-11-30

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050121, C372S043010

Reexamination Certificate

active

07843984

ABSTRACT:
A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2in a direction perpendicular to a cavity length direction, the relations of W1>W2and 80 μm≧W2≧60 μm are satisfied.

REFERENCES:
patent: 7260132 (2007-08-01), Nishida et al.
patent: 2007/0025406 (2007-02-01), Yamada et al.
patent: 11-186651 (1999-07-01), None
patent: 2002-190649 (2002-07-01), None

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