Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-06-19

2010-11-23

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045010, C372S049010

Reexamination Certificate

active

07839911

ABSTRACT:
A semiconductor laser device100having a ridge stripe structure comprises: an n-type clad layer105having a protrusion; and an n-type current block layer107covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8×(3Wf+Wr)<Sc≦L/2×Wf, and W in an arbitrary position in the range is in a range of ½(Wf+Wr)<W≦Wf.

REFERENCES:
patent: 6075801 (2000-06-01), Tamanuki et al.
patent: 6104738 (2000-08-01), Kitoh et al.
patent: 6301283 (2001-10-01), Chen et al.
patent: 6404790 (2002-06-01), Narui et al.
patent: 6567446 (2003-05-01), Huang et al.
patent: 6928097 (2005-08-01), Chida
patent: 7072373 (2006-07-01), Ohkubo et al.
patent: 7257139 (2007-08-01), Takayama
patent: 7301979 (2007-11-01), Ito et al.
patent: 2002/0037021 (2002-03-01), Ohkubo
patent: 2003/0112842 (2003-06-01), Crawford
patent: 2004/0233957 (2004-11-01), Ito et al.
patent: 2005/0163181 (2005-07-01), Takayama
patent: 8-23133 (1996-01-01), None
patent: 9-307181 (1997-11-01), None
patent: 2005-12178 (2005-01-01), None
patent: 2005-209952 (2005-08-01), None
patent: 2006-114605 (2006-04-01), None
Guermache, A., et al., “New Design Rules and Experimental Study of Slightly Flared 1480-nm Pump Lasers”, IEEE Photonics Technology Letters, Mar. 15, 2006, vol. 18, No. 6, IEEE.
Nakatsuka, S., et al., “High-Power Single-Mode Flared Laser Diode with an Intermediate-Width Stripe at the Flare Base”, Jpn. J. Appl. Phys., Feb. 1996, pp. 619-623, vol. 35 Part 1 No. 2A.

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