Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-08-17

2009-06-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045010

Reexamination Certificate

active

07542500

ABSTRACT:
The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1≧W1; W1>W2; and (Wf1−W1)/2L1<(W1−W2)/2L2hold wherein Wf1is a width on the first front end face; W1is a width in a position away from the first front end face by a distance L1; and W2is a width in a position away from said the front end face by a distance L1+L2(whereas L1+L2≦L). The stripe structure of the second first light emitting portion has a section having a width changing along a resonator direction and includes a second front end face, and relationships of Wf2≧W3; W3>W4; and (Wf2−W3)/2L3<(W3−W4)/2L4hold wherein Wf2is a width on the second front end face; W1is a width in a position away from the second front end face by a distance L3(whereas L1≠L3); and W4is a width in a position away from the second front end face by a distance L3+L4.

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